Journal: Semiconductors

Short name
Semiconductors
IF
0.67
SJR
0.29

Papers

Impact Factor

Scientific Journal Ranking

2019

26.
Topological Electronic States on the Surface of a Strained Gapless Semiconductor
O. V. Kibis
O. Kyriienko
Ivan Shelykh
Semiconductors
 , vol.
53
 , pp.
1867-1869
 , 2019
[DOI:
10.1134/s1063782619140100
 ] [ IF:
0.641
 , SJR:
0.298
 ]
25.
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
L. I. Goray
E. V. Pirogov
E. V. Nikitina
E. V. Ubyivovk
Leonid Gerchikov
A. N. Ipatov
A. S. Dashkov
M. S. Sobolev
I. V. Ilkiv
A. D. Bouravlev
Semiconductors
 , vol.
53
 , pp.
1914-1917
 , 2019
[DOI:
10.1134/s1063782619140094
 ] [ IF:
0.691
 , SJR:
0.308
 ]
24.
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity
Olga Sergaeva
Vitaly Yaroshenko
I. A. Volkov
Dmitry Zuev
Roman Savelev
Semiconductors
 , vol.
53
 , pp.
1942-1945
 , 2019
[DOI:
10.1134/s1063782619140197
 ] [ IF:
0.691
 , SJR:
0.308
 ]
23.
Self-Catalyzed MBE-Grown GaP Nanowires on Si (111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
V.V. Fedorov
Alexey Bolshakov
L.N. Dvoretckaia
G.A. Sapunov
D.A. Kirilenko
Alexey Mozharov
K.Y. Shugurov
Vitaliy Shkoldin
G.E. Cirlin
Ivan Mukhin
Semiconductors
 , vol.
52
 , pp.
2092-2095
 , 2019
[DOI:
10.1134/S106378261816008X
 ] [ IF:
0.691
 , SJR:
0.308
 ]
22.
Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
Alexey Mozharov
A.A. Vasiliev
Alexey Bolshakov
G.A. Sapunov
V.V. Fedorov
G.E. Cirlin
Ivan Mukhin
Semiconductors
 , vol.
52
 , pp.
489-492
 , 2019
[DOI:
10.1134/S1063782618040231
 ] [ IF:
0.691
 , SJR:
0.308
 ]
21.
Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode
Alexey Mozharov
A.A. Vasiliev
Filipp Komissarenko
Alexey Bolshakov
G.A. Sapunov
V.V. Fedorov
G.E. Cirlin
Ivan Mukhin
Semiconductors
 , vol.
52
 , pp.
1809-1812
 , 2019
[DOI:
10.1134/S106378261814021X
 ] [ IF:
0.691
 , SJR:
0.308
 ]
20.
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
Alexey Bolshakov
L.N. Dvoretckaia
V.V. Fedorov
G.A. Sapunov
Alexey Mozharov
K.Y. Shugurov
Vitaliy Shkoldin
Mikhail Mukhin
G.E. Cirlin
Ivan Mukhin
Semiconductors
 , vol.
52
 , pp.
2088-2091
 , 2019
[DOI:
10.1134/S1063782618160054
 ] [ IF:
0.691
 , SJR:
0.308
 ]
19.
Red single-photon emission from InAs/AlGaAs quantum dots
M.V. Rakhlin
K.G. Belyaev
G.V. Klimko
Ivan Mukhin
S.V. Ivanov
A.A. Toropov
Semiconductors
 , vol.
52
 , pp.
511-513
 , 2019
[DOI:
10.1134/S1063782618040243
 ] [ IF:
0.691
 , SJR:
0.308
 ]
18.
Quantum Rings Dressed by a High-Frequency Electromagnetic Field
O.V. Kibis
Valerii Kozin
Ivan Iorsh
Ivan Shelykh
Semiconductors
 , vol.
52
 , pp.
1806–1808
 , 2019
[DOI:
10.1134/S1063782618140130
 ] [ IF:
0.691
 , SJR:
0.308
 ]

2018

17.
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers
E. I. Terukov
A. S. Abramov
D. A. Andronikov
K. V. Emtsev
Irina Panaiotti
A. S. Titov
G. G. Shelopin
Semiconductors
 , vol.
52
 , pp.
931-933
 , 2018
[DOI:
10.1134/s1063782618070230
 ] [ IF:
0.691
 , SJR:
0.308
 ]
16.
Experimental observation of Dyakonov plasmons in the mid-infrared
Osamu Takayama
Pavel Dmitriev
Evgeniy Shkondin
Oleh Yermakov
M Panah
K Golenitskii
F Jensen
Andrey Bogdanov
Andrei Lavrinenko
Semiconductors
 , vol.
52(4)
 , pp.
442
 , 2018
[DOI:
10.1134/S1063782618040279
 ] [ IF:
0.672
 , SJR:
0.362
 ]
15.
Floquet Engineering of Gapped 2D Materials
O. V. Kibis
K. Dini
Ivan Iorsh
Ivan Shelykh
Semiconductors
 , vol.
52
 , pp.
523-525
 , 2018
[DOI:
10.1134/s1063782618040176
 ] [ IF:
0.641
 , SJR:
0.298
 ]
14.
Geometry Optimization and Charge Density Distribution of Single Layer of ZN-Based Metal-Organic Framework
Natalia Senkevich
Ivan Vrubel
Roman Polozkov
Ivan Shelykh
Semiconductors
 , vol.
52
 , pp.
597-599
 , 2018
[DOI:
10.1134/s1063782618050287
 ] [ IF:
0.672
 , SJR:
0.362
 ]
13.
Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
D.V. Lebedev
N.A. Kalyuzhnyy
S.A. Mintairov
K.G. Belyaev
M.V. Rakhlin
A.A. Toropov
P. Brunkov
A.S. Vlasov
J. Merz
S. Rouvimov
S. Oktyabrsky
M. Yakimov
I.V. Mukhin
A.V. Shelaev
V.A. Bykov
A.Y. Romanova
P.A. Buryak
A.M. Mintairov
Semiconductors
 , vol.
52
 , pp.
497-501
 , 2018
[DOI:
10.1134/S1063782618040206
 ] [ IF:
0.672
 , SJR:
0.362
 ]

2016

12.
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon
A. V. Sachenko
Yu. V. Kryuchenko
V. P. Kostylyov
I. O. Sokolovskyi
A. S. Abramov
A. V. Bobyl
Irina Panaiotti
E. I. Terukov
Semiconductors
 , vol.
50
 , pp.
257-260
 , 2016
[DOI:
10.1134/s1063782616020226
 ] [ IF:
0.701
 , SJR:
0.455
 ]

2014

11.
Lasing in microdisks of ultrasmall diameter
A.E. Zhukov
N.V. Kryzhanovskaya
M.V. Maximov
A.A. Lipovskii
A.V. Savel`yev
Andrey Bogdanov
I.I. Shostak
E.I. Moiseev
D.V. Karpov
J. Laukkanen
J. Tommila
Semiconductors
 , vol.
48
 , pp.
1626-1630
 , 2014
[DOI:
10.1134/S1063782614120240
 ] [ IF:
0.705
 , SJR:
0.429
 ]
10.
Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells
V.M. Andreev
E.A. Grebenshchikova
Pavel Dmitriev
N.D. Ilinskaya
V.S. Kalinovsky
E.V. Kontrosh
A.V. Malevskaya
A.A. Usikova
Semiconductors
 , vol.
48
 , pp.
1217-1221
 , 2014
[DOI:
10.1134/S1063782614090024
 ] [ IF:
0.705
 , SJR:
0.429
 ]
9.
Properties of Zn1 - x Co x O films produced by pulsed laser deposition with fast particle separation
A.A. Lotin
O.A. Novodvorsky
V.V. Rylkov
Dmitry Zuev
O.D. Khramova
M.A. Pankov
B.A. Aronzon
A.S. Semisalova
N.S. Perov
A. Lashkul
E. Lahderanta
V.Ya. Panchenko
Semiconductors
 , vol.
48
 , pp.
538-544
 , 2014
[DOI:
10.1134/S1063782614040186
 ] [ IF:
0.705
 , SJR:
0.429
 ]
8.
Study of the electrical properties of individual (Ga,Mn)As nanowires
A.D. Bouravleuv
N.V. Sibirev
E.P. Gilstein
P.N. Brunkov
Ivan Mukhin
M. Tchernycheva
A.I. Khrebtov
Yu.B. Samsonenko
G.E. Cirlin
Semiconductors
 , vol.
48
 , pp.
344-349
 , 2014
[DOI:
10.1134/S1063782614030075
 ] [ IF:
0.705
 , SJR:
0.429
 ]

2013

7.
Light Emission from Silicon Nanocrystals
O.B. Gusev
Alexander Poddubny
A.A. Prokofiev
I.N. Yassievich
Semiconductors
 , vol.
47
 , pp.
183-202
 , 2013
[DOI:
10.1134/S1063782613020103
 ] [ IF:
0.600
 , SJR:
0.447
 ]

2012

6.
Pulsed laser deposition of ITO thin films and their characteristics
Dmitry Zuev
A.A. Lotin
O.A. Novodvorsky
F.V. Lebedev
O.D. Khramova
I.A. Petuhov
Ph.N. Putilin
A.N. Shatohin
M.N. Rumyanzeva
A.M. Gaskov
Semiconductors
 , vol.
46
 , pp.
410-413
 , 2012
[DOI:
10.1134/S1063782612030256
 ] [ IF:
0.627
 , SJR:
0.323
 ]
5.
Transport and partial localization of electrons in strained short-period semiconductor superlattices
Leonid Gerchikov
K. Aulenbacher
Yu. A. Mamaev
E. J. Riehn
Yu. P. Yashin
Semiconductors
 , vol.
46
 , pp.
67-74
 , 2012
[DOI:
10.1134/s1063782612010095
 ] [ IF:
0.627
 , SJR:
0.323
 ]

2011

4.
Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
A.O. Golubok
Yu.B. Samsonenko
Ivan Mukhin
A.D. Buravlev
G.E. Cirlin
Semiconductors
 , vol.
45
 , pp.
1049-1052
 , 2011
[DOI:
10.1134/S1063782611080082
 ] [ IF:
0.605
 , SJR:
0.257
 ]
3.
Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
N.V. Kryzhanovskaya
S.A. Blokhin
M.V. Maximov
A.M. Nadtochy
A.E. Zhukov
K.V. Fedorova
N.N. Ledentsov
V.M. Ustinov
N.D. Il’inskaya
D. Bimberg
Semiconductors
 , vol.
45
 , pp.
962-965
 , 2011
[DOI:
10.1134/S1063782611070116
 ] [ IF:
0.605
 , SJR:
0.257
 ]
2.
A model of nonlinear optical transmittance for insulator nanocomposites
V.P. Dzyuba
Alexander Krasnok
J.N. Kulchin
I.V. Dzyuba
Semiconductors
 , vol.
45
 , pp.
295-301
 , 2011
[DOI:
10.1134/S1063782611030109
 ] [ IF:
0.605
 , SJR:
0.257
 ]

2010

1.
Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO2 composites in the 1.3-1.6 mum spectral range
A.B. Pevtsov
S.A. Grudinkin
Alexander Poddubny
S.F. Kaplan
D.A. Kurdyukov
V.G. Golubev
Semiconductors
 , vol.
44
 , pp.
1537-1542
 , 2010
[DOI:
10.1134/S1063782610120018
 ] [ IF:
0.637
 , SJR:
0.309
 ]