Dmitry A. Tatarinov
Main position
Main position
4th year PhD student
Email
dmitry.tatarinov@metalab.ifmo.ru
Education
Papers
Impact Factor
Scientific Journal Ranking
2024
8.
[DOI:
10.1021/acsenergylett.4c02404
]
[
IF:
23.101
, SJR:
8.632
]
7.
[DOI:
10.1039/d4cc04488f
]
[
IF:
6.222
, SJR:
1.837
]
6.
[DOI:
10.1039/d4cc04488f
]
[
IF:
6.222
, SJR:
1.837
]
5.
Charge Trapping and Defect Dynamics as Origin of Memory Effects in Metal Halide Perovskite Memlumors
[DOI:
10.1021/acs.jpclett.4c00985
]
[
IF:
6.888
, SJR:
1.850
]
4.
[DOI:
10.1021/acsenergylett.4c00691
]
[
IF:
22.000
, SJR:
7.855
]
2023
3.
,
vol.
16
,
2023
[DOI:
10.18721/JPM.163.110
]
2.
[DOI:
10.1002/adom.202202407
]
2022
1.
[DOI:
10.3390/nano12213916
]
[
IF:
5.719
, SJR:
0.839
]
Курсы отсутствуют.
| Название патента | Авторы | Тип | Год |
|---|---|---|---|
| Method for manufacturing highly crystalline inorganicperovskite thin films CsPbBr3 | Anatoly Pushkarev, Sergey Anoshkin, Sergey Makarov, Dmitry Tatarinov | Изобретение | 2023 |
Новости отсутствуют.