PeroSeminar | 03 April 2025

In this presentation, I will discuss my recent findings on ion migration within a single cesium lead bromide perovskite nanocrystal, which is grown on an indium tin oxide (ITO) substrate. Utilizing a boron-doped diamond (BDD) atomic force microscopy tip, the current-voltage (IV) characteristics of the perovskite is recorded. The inert nature of the electrodes prevents any chemical reactions between the perovskite and the contacts, leading to the accumulation of ions at the interfaces. This ion accumulation modulates the Schottky barrier properties, resulting in enhanced current injection. Despite the low mobility of ions, this system exhibits memory states lasting several milliseconds, indicative of a unipolar volatile memristor behavior. In this talk, we will explore the underlying ion transport mechanisms, particularly focusing on hopping transport, and demonstrate how we can solve the coupled system of nonlinear differential equations to accurately calculate the IV characteristics.