Microwave seminar | 07 August 2023

The presentation discuss the development, optimization, and design of a memristive crossbar based on yttrium oxide for neuromorphic applications. The crystallinity and metal-semiconductor interface has been studied to understand the effect of these parameters on the behavior of yttrium oxide-based resistive memory. The synaptic behavior has been shown in yttria-based devices for the first time in the world.
The dual ion beam sputtering (DIBS) system has been used to deposit the switching layer (40 nm) in the devices.


Main paper/arXiv, related to the seminar, and other references
Mangal Das, Amitesh Kumar, Sanjay Kumar, Pawan Kumar, Biswajit Mandal, Myo Than Htay, and Shaibal Mukherjee, “Impact of interfacial SiO2 on dual ion beam sputtered Y2O3-based memristive system,” IEEE Transactions on Nanotechnology, vol. 19, 2020. (Impact Factor: 2.3)
Mangal Das, Amitesh Kumar, Rohit Singh, Myo Than Htay, and Shaibal Mukherjee, “Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering”, Nanotechnology, vol. 29, 2018. (Impact Factor: 3.4)
Mangal Das, Amitesh Kumar, Biswajit Mandal, Myo Than Htay, and Shaibal Mukherjee, “Impact of Schottky junctions in the transformation of switching modes in amorphous Y2O3-based memristive system”, Journal of Physics D: Applied Physics, vol. 51, 2018. (Impact Factor: 2.4)
Mangal Das, Amitesh Kumar, Sanjay Kumar, Biswajit Mandal, Md. Arif Khan, and Shaibal Mukherjee, “Effect of surface variations on the performance of yttria based memristive system,” IEEE Electron Device Letters, vol. 39, 2018. (Impact Factor: 3.4)