Оптический семинар. Сенковский, Степикова, Новиков

24.01.2020
10:00
Начало
24.01.2020
10:00
Место

ул. Ломоносова, 9

ауд. 2530 

Внутриуниверситетское

Boris Senkovskiy (University of Cologne)

‘ARPES studies of low-dimensional materials’


Abstract: Angle-resolved photoemission spectroscopy (ARPES) is a powerful tool that provides the key to the properties of crystalline materials by direct measurements of the electronic band dispersion. This talk will be dedicated to our ARPES studies of two-dimensional (2D) materials, including functionalized graphene, black phosphorus, tin selenide. ARPES studies of a unique 1D material - atomically precise graphene nanoribbons, will be also presented.


Dr. Margarita Stepikhova (Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia)

‘Luminescence enhancement phenomena in photonic crystal slabs and cavities fabricated on Si structures with Ge(Si) nanoislands’


Abstract: In this contribution, we discuss the luminescent properties of photonic crystal (PhC) slabs and cavities fabricated on Si structures with the self-assembled Ge nanoislands. The structures of this type emit in the telecommunication wavelength range of 1.2 – 1.6 µm, which makes them promising for device applications in Si photonics. The strong (by more than two orders of magnitude) enhancement of photoluminescence response related with Ge(Si) nanoislands was observed both in PhC slabs and PhC cavities though for different parameters of photonic crystals. The processes of the nanoislands - photonic crystal and cavity modes interaction, which are responsible for this strong luminescence enhancement are discussed.

Slides - in English; speech - in Russian.


Dr. Alexey Novikov (Institute for Physics of Microstructures RAS)

‘SiGe heterostructures as an active medium for microresonators’


Abstract: The results on the formation of light-emitting SiGe structures with selfassembled nanoislands and locally tensile strain n-Ge microstructures obtained at the IPM RAS will be presented. Optimal growth conditions for achievement of the maximum photoluminescence intensity at room temperature for both types of structures were determined. The advantages of structures with Ge(Si) nanoislands as an active medium in various microresonators will be demonstrated. The possibility of achievement of the stimulated emission in locally tensile strained n-Ge microstructures through their embedding into resonators will be discussed.

Slides - in English; speech - in Russian.