Semiconductor Device Modeling
Language of instruction
English
Семестр
осенний
Трудоемкость
3.00 з.е.
Аудиторная нагрузка
1 лекция в неделю
Итоговый контроль
экзамен

The objective of this course is to introduce students to the various numerical methods employed in simulating electronic and ionic transport in classical and perovskite semiconductors. The course aims to equip students with a comprehensive understanding of the numerical approaches utilized for simulating transport in devices. This will be accomplished through a combination of lectures, homework assignments, and practical exercises.

The course contains 16 lectures including practices and the mid-term session. 10 lecture is devoted to theory and implementing numerical solution of drift diffusion problem using MATLAB software. (students are free to use any software for implementing their code, Python or C++, but MATLAB software will be used in the practices). 4 lectures devoted to explaining some additional features in drift diffusion problem by using COMSOL library examples. 1 lecture is devoted to the effect of mobile ions in perovskite and introducing Driftfusion open-source code.

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