PeroSeminar | 23 July 2026

As conventional crystalline silicon solar cells near their single-junction Shockley-Queisser efficiency limit, perovskite-HJT tandem technology stands out as the leading fourth-generation photovoltaic solution to break this theoretical barrier. HJT offers unmatched structural and process compatibility with perovskite compared to TOPCon and PERC architectures: its pin device structure, low-temperature metallization and low parasitic absorption align perfectly with perovskite fabrication, requiring only 4 additional deposition steps to upgrade existing production lines at minimal retrofitting cost. With an optimized 1.68 eV perovskite / 1.1 eV silicon bandgap alignment enabling >43% theoretical efficiency, this work addresses the critical industrial bottleneck of large-area efficiency roll-off by developing four parallel fabrication routes for textured HJT substrates, including thermal evaporation, solution processing, slot-die and roll-to-roll printing. Systematic optimization of core tandem parameters delivers a certified power conversion efficiency of 32%. We further establish a multi-dimensional stability framework spanning composition engineering, interface modification, 2D/all-inorganic perovskite design, inert electrodes and high-barrier encapsulation to mitigate degradation from moisture, heat, ion migration and metal diffusion. Supported by China’s dual-carbon strategies, we have commissioned a 1MW pilot production line for textured perovskite-HJT tandem modules, completing the lab-to-pilot transition and accelerating the technology’s industrial commercialization.