Alexey Kuznetsov, Аникина Мария, Adilet Nurlanbekovich Toksumakov, Artem Abramov, Вячеслав Дремов, Eseniia Zavialova, Valeriy Kondratiev, Федотов Владимир, Ivan Mukhin, Vasily Kravtsov, Новоселов Костя, Aleksey Arsenin, Волков Валентин, Davit Armenovich Ghazaryan, Alexey Bolshakov, "In-Plane Directional MoS2 Emitter Employing Dielectric Nanowire Cavity", Small Structures, 2025, [DOI: 10.1002/sstr.202400476] [IF: 13.90, ]Alexey Kuznetsov, Eduard Moiseev, Artem Abramov, Nikita Fominykh, Vladislav A. Sharov, Valeriy M. Kondratev, Ivan Shishkin, Konstantin P. Kotlyar, Demid A. Kirilenko, Vladimir V. Fedorov, Svetlana A. Kadinskaya, Alexandr A. Vorobyev, Ivan Mukhin, Aleksey V. Arsenin, Valentyn S. Volkov, Vasily Kravtsov, Alexey Bolshakov, "Elastic Gallium Phosphide Nanowire Optical Waveguides—Versatile Subwavelength Platform for Integrated Photonics", Small, 2023, [DOI: 10.1002/smll.202301660] [IF: 15.15, SJR: 3.23]Vladimir V. Fedorov, Alexey Bolshakov, Olga Sergaeva, Vladimir Neplokh, Daria Markina, Stéphanie Bruyère, Grégoire Saerens, Mihail Petrov, Rachel Grange, Sergey Makarov, Ivan Mukhin, "Gallium Phosphide Nanowires in a Free-Standing, Flexible, and Semitransparent Membrane for Large-Scale Infrared-to-Visible Light Conversion", ACS Nano, vol. 14, pp. 10624–10632, 2020, [DOI: 10.1021/acsnano.0c04872] [IF: 15.88, SJR: 5.55]Pavel Trofimov, Anatoly Pushkarev, Ivan Sinev, Vladimir V. Fedorov, Stéphanie Bruyère, Alexey Bolshakov, Ivan Mukhin, Sergey Makarov, "Perovskite - Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip", ACS Nano, vol. 14, pp. 8126–8134, 2020, [DOI: 10.1021/acsnano.0c01104] [IF: 15.88, SJR: 5.55]Alexey Mozharov, Sergey Makarov, Alexey Bolshakov, Ivan Mukhin, "Peculiarities of Magnetron Sputtering of Nickel Oxide Thin Films for Use in Perovskite Solar Cells", Technical Physics, vol. 64, pp. 422-426, 2019, [DOI: 10.1134/s1063784219030022] [IF: 0.60, SJR: 0.38]Vitaliy Shkoldin, Dmitry Permyakov, Konstantin Ladutenko, Alexey Bolshakov, Andrey Bogdanov, Anton Samusev, Ivan Mukhin, "Investigation of the light emission in the local tunnel junction and its dependence on the contact surface morphology", Journal of Physics: Conference Series, vol. 1199, pp. 012005, 2019, [DOI: 10.1088/1742-6596/1199/1/012005] [SJR: 0.22]Vitaliy Shkoldin, Dmitry Permyakov, Konstantin Ladutenko, Alexey Bolshakov, Andrey Bogdanov, Anton Samusev, Ivan Mukhin, "Crucial Role of Metal Surface Morphology in Photon Emission from Tunnel Junction at Ambient Conditions", Journal of Physical Chemistry C, vol. 123, pp. 8813, 2019, [DOI: 10.1021/acs.jpcc.8b11271] [IF: 4.19, SJR: 1.48]Vitaliy Shkoldin, Dmitry Permyakov, Alexey Bolshakov, Anton Samusev, Ivan Mukhin, "Influence of Au surface properties on photon emission from localized metal-insulator-metal tunnel contact", Journal of Physics: Conference Series, vol. 1124, pp. 41018, 2019, [DOI: 10.1088/1742-6596/1124/4/041018] [SJR: 0.22]Alexey Bolshakov, Alexey Mozharov, Ivan Mukhin, "Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes", Materials Research Express, vol. 4, pp. 125027, 2019, [DOI: 10.1088/2053-1591/aa9e9d] [IF: 1.93, SJR: 0.37]Alexey Bolshakov, Alexey Mozharov, Vitaliy Shkoldin, Ivan Mukhin, "Self-Catalyzed MBE-Grown GaP Nanowires on Si (111): V/III Ratio Effects on the Morphology and Crystal Phase Switching", Semiconductors, vol. 52, pp. 2092-2095, 2019, [DOI: 10.1134/S106378261816008X] [IF: 0.64, SJR: 0.30]Alexey Mozharov, Alexey Bolshakov, Ivan Mukhin, "Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure", Materials Science in Semiconductor Processing, vol. 90, pp. 20-25, 2019, [DOI: 10.1016/j.mssp.2018.09.024] [IF: 3.09, SJR: 0.67]Alexey Bolshakov, Alexey Mozharov, Ivan Mukhin, "Dopant-stimulated growth of GaN nanotube-like nanostructures on Si (111) by molecular beam epitaxy", Beilstein Journal of Nanotechnology, vol. 9, pp. 146-154, 2019, [DOI: 10.3762/bjnano.9.17] [IF: 2.61, SJR: 0.66]Alexey Mozharov, Alexey Bolshakov, Ivan Mukhin, "Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential", Semiconductors, vol. 52, pp. 489-492, 2019, [DOI: 10.1134/S1063782618040231] [IF: 0.64, SJR: 0.30]Alexey Mozharov, Filipp Komissarenko, Alexey Bolshakov, Ivan Mukhin, "Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode", Semiconductors, vol. 52, pp. 1809-1812, 2019, [DOI: 10.1134/S106378261814021X] [IF: 0.64, SJR: 0.30]Alexey Bolshakov, Alexey Mozharov, Ivan Mukhin, "Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy", CrystEngComm, vol. 20, pp. 3370-3380, 2019, [DOI: 10.1039/C8CE00348C] [IF: 3.12, SJR: 0.81]Alexey Bolshakov, Alexey Mozharov, Vitaliy Shkoldin, Ivan Mukhin, "Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires", Semiconductors, vol. 52, pp. 2088-2091, 2019, [DOI: 10.1134/S1063782618160054] [IF: 0.64, SJR: 0.30]Ivan Mukhin, Alexey Mozharov, Alexey Bolshakov, "Influence of condensation enhancement effect on AFM image contrast inversion in hydrophilic nanocapillaries", Applied Surface Science, vol. 471, pp. 621-626, 2019, [DOI: 10.1016/j.apsusc.2018.11.212] [IF: 6.18, SJR: 1.23]Alexey Mozharov, Alexey Bolshakov, Ivan Mukhin, "Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer", Journal of Physics: Conference Series, vol. 690, pp. 12041, 2016, [DOI: 10.1088/1742-6596/690/1/012041] [SJR: 0.25]Alexey Mozharov, Alexey Bolshakov, Ivan Mukhin, Harmand J. C., "Modeling, synthesis and study of highly efficient solar cells based on III-nitride nanowire arrays grown on Si substrates", Journal of Physics: Conference Series, vol. 643, pp. 12115, 2015, [DOI: 10.1088/1742-6596/643/1/012115] [SJR: 0.26]Alexey Mozharov, Alexey Bolshakov, Ivan Mukhin, "Numerical modeling of photovoltaic efficiency of n-type GaN nanowires on p-type Si heterojunction", Physica Status Solidi - Rapid Research Letters, vol. 9, pp. 507-510, 2015, [DOI: 10.1002/pssr.201510241] [IF: 2.14, SJR: 1.16]